国家/地区 美国（3）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC B32B003/00（3）
发明人 SAENGER K（3）
公开年 2015（2）
申请年 2015（2） 
专利权人 INT BUSINESS.（3） EGYPT NANOTE.（2） EGYPT NANOTE.（2）

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I