国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C016/26（5） H01B001/04（4） H01B001/02（3）
H01B005/14（2） H01B013/00（2）
发明人
公开年 2017（5）
申请年 2016（4） 
专利权人

Frontal structure, has graphene coating film formed in order to surround copper wire with rapidity thermal chemical vapor deposition process, where copper wire is extended to one-way direction.

WON D K, LIM H T, RYU J C, YUAN D, LIM H, RYU J

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

High conductivity composite metal material comprises matrix and graphene layers.

RUI D, SUN Y, WANG J