国家/地区 韩国（6） 日本（2） 美国（2）
IPC部 C（4） H（4） B（2）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4） H01B（2） H01L（2）
IPC C01B031/04（4） C01B031/00（2） H01B001/24（2）
发明人 KIM J（6）
公开年 2010（6）
申请年 2009（6） 
专利权人 ABC SANG CO .（3）

Manufacture of graphene involves producing thermal plasma flame, producing carbon atom beam by adding air or liquid carbon source material into flame, producing beam with decreasing energy of carbon atom beam and crashing carbon atom beam.

SEO J, KIM J, JUNG S S, JU H K

Electroconductive particle comprising a polymer microparticle and graphene coating layer grafted on the polymer microparticle, useful in anisotropic conductive film for packaging electronic devices.

LEE S, KIM K, LIM S H, PARK M, KIM J K, KIM H, LEE H, KIM G, IM S, KIM J, KIM K H, KIM H S, YI S S, I H J, SU LEE S, SUK KIM H, JEONG LEE H, GYEONG KIM J, HO IM S, LEE S S

Graphene hollow nanosphere unit manufacturing method for manufacturing thin film transistor LCD, involves forming hydrocarbon that is solidified from liquid, and forming graphene material at upper part of micro nano particle.

KIM J

Graphene complex composition used for transparent conductive film, contains graphene formed by carrying out low-temperature pyrolysis of carbon precursor, cooling and solidifying in hydrocarbon and etching with aqueous solvent.

KIM J, KIM J H

Production of graphene material used in optics and electromagnetic fields, involves etching single-phase carbon precursor which is obtained by low-temperature pyrolysis using hydrocarbon solvent.

KIM J

Quantum interference transistor has graphene sheet including several channel formed between source and drain, and gate formed at channel, such that predefined number of path differences are formed between source and drain.

CHUNG H, HONG K, KIM J, SEO S, SHIN J, SHIN J K, SEO S A, HONG K H, CHUNG H J, HONG G, JEONG H, JIN Y G, JUNG H J, KIM J S, JUNG H