国家/地区 韩国（4）
IPC部 B（4）
IPC大类 B32（4） C01（4）
IPC小类 B32B（4）
IPC B32B009/00（2） C01B031/02（2） C01B031/04（2）
发明人 KIM K B（4）
公开年 2011（4）
申请年 2009（4）
专利权人 SNU R DB FOU.（4）

Manufacture of graphene involves forming laminate structure comprising metal thin film and carbon-dissolved silicon thin film and then thermal-treating structure.

KIM K B, KIM H M

Manufacture of graphene used for e.g. photoelectric cell, involves forming carbon-dissolved metal thin film on substrate, and forming laminate structure on substrate by thermal-treating carbon-dissolved metal thin film.

KIM K B, KIM H M

Method for forming graphene layer used for element fabrication, involves forming laminated structure comprising graphite catalyst thin film and amorphous carbon thin film on substrate, thermally treating and removing catalyst thin film.

KIM K B, KIM H M

Manufacture of graphene for layered structure, involves exposing silicon substrate to primary gas containing carbon to form silicon carbide layer by carbonization of surface of silicon substrate, and supplying secondary gas having carbon.

KIM K, KIM K B