国家/地区 美国（4） 中国（2） 德国（2） 英国（2） 世界知识产权组织（2）
IPC部 B（4） H（4）
IPC大类 H01（4） B82（3） B32（2）
IPC小类 H01L（4） B82Y（3） B32B（2）
IPC B32B009/00（2） B82Y099/00（2） H01L021/20（2）
H01L029/06（2） H01L029/775（2） H01L029/78（2）
发明人 DIMITRAKOPOULOS C（4）
公开年 2012（4）
申请年 2011（2） 
专利权人 INT BUSINESS.（4）

Crystalline structure for silicon carbide layer, includes graphene layer that is located directly on crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Formation of graphene layer used for structure, involves forming graphene layer directly on a crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L