国家/地区 美国（4）
IPC部 H（3） B（2） C（2）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC H01L029/06（3） C01B031/02（2） C01B032/182（2）
H01L021/3205（2） H01L021/768（2） H01L023/532（2）
H01L029/16（2） H01L029/66（2） H01L029/786（2）
发明人 SATO S（3）
公开年 2014（4）
申请年 2013（2）  2014（2） 
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（4）

Electronic device e.g. graphene transistors, has nanocarbon material, electrodes connected to nanocarbon material, and lower layer and upper layer containing molecular material having doping function on nanocarbon material.

SATO S, YAMADA A, YAGI K, TAKAHASHI M

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Sheet material, useful for producing a graphene sheet structure to fabricate FET, comprises structures of graphene oxide and graphene, where the graphene oxide and the graphene are chemically connected to form a plane.

MIYAMOTO Y