国家/地区 韩国（4） 美国（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 KIM S（4）
公开年 2014（4）
申请年 2014（4）
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Thermoelectric structure for forming thermoelectric device for thermoelectric apparatus, comprises graphene layer, and thermoelectric component comprising thermoelectric film and quantum dot on thermoelectric film, on graphene layer.

LEE K, KIM S, HWANG S, LEE S, LEE Y, HWANG S W, KIM S I, KIM S W, LEE K H, LEE S M, LEE Y H

Insulating sheet for electrical device, has hexagonal boron nitride sheet which is arranged on graphene sheet.

KIM S, LEE K, KIM S W, LEE K H

Manufacture of graphene counter electrode used for dye-sensitized solar cell, involves manufacturing graphene compound with nitrogen element, and surface-treating fluorine doped tin oxide transparent electrode with graphene compound.

KIM H, JU M, CHOI I, KIM S, KIM J, LEE J, BAEK J, JEON I, CHOI H, KIM H K, JU M J, CHOI I T, KIM S G, KIM J C, LEE J J, BAEK J B, JEON I Y, CHOI H J

Method for obtaining correlation of absorption and luminescence properties of graphene quantum dots by changing size and shape of graphene quantum dots, involves obtaining correlation of optical absorption and luminous energy.

HO C S, KIM S, CHOI S H