国家/地区 中国（3）
IPC部 B（3） C（2） H（2）
IPC大类 B01（2） C01（2） H01（2）
IPC小类 B01J（2） C01B（2）
IPC
发明人 DING G（4）
公开年 2016（4）
申请年 2015（3） 
专利权人 SHANGHAI INS.（2）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Nitrogen-doped graphene/ferronickel hydrotalcite bifunctional catalyst used in electrolysis of alkaline water, is obtained by assembling ferronickel hydrotalcite on graphene oxide and doping with carbon nitride nano sheet using micelle.

ZHAN T, ZHANG Y, LU S, DING G, ZHANG X

Making iron-graphene particles by pickling iron powder with dilute hydrochloric acid, washing, leaving iron powder on filter paper, adding sodium dodecyl benzene sulfonate to graphene oxide solution and soaking iron powder in solution.

DING G, LI M, MA X, LIU X