国家/地区 美国（6）
IPC部 C（6）
IPC大类 C01（6） H01（3） C23（2）
IPC小类 C01B（6）
IPC C01B031/04（4）
发明人 LEE S（6）
公开年 2016（6）
申请年 2015（3）  2014（2） 
专利权人

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Method for generating light emission from electrically biased graphene for electrodes and optoelectronic applications, involves providing current to graphene membrane to establish source-drain bias voltage along graphene membrane.

KIM Y D, WANG L, LEE S, HONE J

Graphene membrane film used in system for purifying solvent, comprises several plate-shaped laminated graphene flakes containing physical bond or chemical bond for connecting pair of layers, and has preset thickness and oxygen content.

LEE S H, KIM S J, SEO D K, KIM Y H, GEONHUI L, LEE S, KIM S

AA' stacked graphite used as e.g. electrode material comprises graphene stacked the sequence of AA' in which alternate graphene layers exhibiting AA' stacking are horizontally translated by half hexagon from zigzag AA stacking of graphene.

LEE J, LEE S, AHN J, LEE W

Ceramic capacitor e.g. ceramic disc capacitor, consists of dielectric ceramic layer(s) and electrode layer(s) containing graphene electrode- or exfoliated graphite electrode layer, deposited on dielectric ceramic layer.

LIN Y, JANG B Z, LEE S, ZHAMU A

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S