国家/地区 韩国（6）
IPC部 C（5） B（4） A（2）
H（2）
IPC大类 C01（4） B82（3） B01（2）
H01（2）
IPC小类 C01B（4） B82Y（3）
IPC C01B031/04（4） B82Y030/00（3） B82Y040/00（3）
C01B032/182（3）
发明人 KIM S（6）
公开年 2016（6）
申请年 2015（4） 
专利权人 UNIV KYUNGHE.（2） UNIV SEOUL N.（2）

Method for doping support layer-based graphene used for electrical and electronic components, involves growing graphene on catalyst layer, forming support layer on graphene, injecting dopant into graphene, and heat-treating graphene.

CHOI S H, JANG C W, KIM S, SUK H C, CHAN W J, SUNG K

Transparent graphene electrode for use in transparent ultra-capacitor, has polymer layer formed by autopolymerizing monomer on surface of first graphene layer, and second graphene layer formed on polymer layer.

JO K, KIM K, KIM S, LEE S, KIM J, LEE H, LEE S M, KIM J H, LEE H J, ZHAO J, LI C

Manufacture of reduced graphene oxide-containing hydrogel used in e.g. absorber, involves gelling hydrogel precursor in hydrogel precursor-graphene oxide mixture, obtaining graphene oxide-containing hydrogel and reducing graphene oxide.

LEE J Y, KIM S, JO H, CAO H, LEE J

Graphene membrane film used in system for purifying solvent, comprises several plate-shaped laminated graphene flakes containing physical bond or chemical bond for connecting pair of layers, and has preset thickness and oxygen content.

LEE S H, KIM S J, SEO D K, KIM Y H, GEONHUI L, LEE S, KIM S

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C