国家/地区 韩国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 SHIN H J（2）
公开年 2017（3）
申请年 2015（3）
专利权人 SAMSUNG ELECTRONICS CO LTD（3）

Two-dimensional material hard mask for manufacturing electronic device e.g. capacitor, has hydrogen, oxygen and two-dimensional material layer with layered crystalline structure, and carbon structure includes graphene sheets.

SHIN K, SEOL M, SHIN H, KIM S, PARK S, SHIN K W, SEOL M S, SHIN H J, KIM S W, PARK S J

Direct growing of graphene involves arranging substrate in chamber having target surface on which graphene is to be grown, feeding catalyst gas containing carbon-containing compound, and growing graphene layer on target surface.

LEE J H, SHIN H J, WHANG D M

Semiconductor memory device e.g. three-dimensional nonvolatile memory device in personal digital assistants (PDA), has oxide semiconductor pattern which is connected to graphene layer through gate electrodes.

KIM T S, KANG J, OH K, JANG T S