国家/地区 中国（5）
IPC部 H（3） C（2）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC H01L033/00（3） H01L033/44（3） H01L033/22（2）
发明人 DING T（5）
公开年 2017（5）
申请年 2016（3）  2017（2） 
专利权人 HC SEMITEK Z.（3） ENN SCI TEC.（2）

Preparing aldehyde-based graphene for preparing graphene composite material, involves mixing graphene with Vilsmeier reagent, heating, reflowing, subjecting to imidization reaction with Vilsmeier reagent to obtain graphene imidization.

DING T, ZHAO W, SUN Y, WU B

LED chip has P-type electrode that is provided on graphene film layer, and titanium dioxide nanorods that are arranged in array manner on graphene film layer, and whose outer surface is provided with multiple silver nanoparticles.

DING T, GE Y, GUO B, HU J, LI P, LV M

Preparation method of epitaxial wafer of light emitting diode, involves growing zinc oxide (ZnO) nano cone layer on graphene layer and silver nanoparticle layer is grown on ZnO nano-cone layer.

DING T, GE Y, GUO B, HU J, LI P, LV M

Light-emitting diode chip contains substrate, undoped aluminum nitride buffer layer, undoped gallium nitride layer, N-type gallium nitride layer, multi-quantum well layer, graphene film layer and titanium dioxide nanorods.

DING T, GE Y, GUO B, HU J, LI P, LV M

Preparing graphene involves reacting graphene oxide and metal salt to obtain graphene, where oxygen-containing functional group in graphene oxide is complexed with metal ion in metal salt.

DING T, ZHAO W, CHEN C