国家/地区 中国（3） 美国（2）
IPC部 C（4）
IPC大类 C09（3） C08（2）
IPC小类 C09K（3） C08K（2） C08L（2）
IPC C09K005/14（3） C08K003/08（2） C08K003/22（2）
C08K003/28（2） C08K007/24（2） C08K013/06（2）
C08L063/00（2）
发明人 LAI C（5）
公开年 2017（5）
申请年 2016（5）
专利权人 TONGLING TON.（2）

Manufacture of field effect transistor for e.g. sensing device, involves forming multilayer graphene stack on base substrate face, depositing drain electrode, obtaining partially fluorinated graphene block and depositing gate electrode.

BOUTCHICH M, OUERGHI A, LAI C, HO K

Graphene baking varnish used to coat a metal surface, comprises graphene nanoflakes, heat dissipation fillers e.g. tin, dispersant i.e. nonionic or ionic dispersant, binders made of thermoplastic polymers, and carriers e.g. organic solvent.

LAI C, CHANG K, CHEN J

High thermal conductivity composite material comprises e.g. silicon carbide, aluminum powder, silicon dioxide, aluminum nitride, polyvinyl butyral, stearic acid, silver particles, dimethyl silicone oil, graphene and lithium hydroxide.

GUO H, AN D, XIA J, XIAO J, LAI C

Aluminum nitride-carbon nanowire composite material for LED, contains silicon carbide, aluminum powder, silicon oxide, yttrium oxide, montmorillonite, curing agent, emulsified silicone oil, stearic acid, polyvinyl butyral and graphene.

GUO H, AN D, XIA J, XIAO J, LAI C

Titanium dioxide/graphene/molecularly imprinted complex material used for removing bisphenol A in water, produced by polymerizing bisphenol A, titanium dioxide/graphene complex, and O-phenylenediamine, and eluting bisphenol A.

WANG M, LAI C, ZENG G, HUANG D, ZHANG C, WANG R, XU P, CHENG M, HUANG C, QIN L, WAN J