国家/地区 中国（4） 韩国（2） 美国（2）
IPC部 C（8）
IPC大类 C04（8）
IPC小类 C04B（8）
IPC C04B035/52（3） C01B031/04（2） C01B032/184（2）
C01B032/198（2） C04B035/622（2） C04B035/632（2）
H01M004/62（2）
发明人
公开年 2017（8）
申请年 2016（8）
专利权人

Ceramic sintered body useful in electrostatic chuck, comprises aluminum oxide and aluminum nitride and material including graphite and graphene.

BAIK S W, CHO W S, CHOI K B, KIM B H, KIM J Y

Controlled layer spaced graphene-silicon composite useful in lithium secondary battery, comprises a first graphene layer, a second graphene layer, a column material connecting the second graphene layer, and a third graphene layer.

KIM D, KIM Y, LEE H, LEE K

Graphene material for lithium battery, comprises potassium hydroxide, active carbon, graphene oxide, sodium hydroxide, sodium borohydride, lithium nitrate, triethylene tetramine, N,N-diethyl ethanolamine and ethanol.

WANG W

Preparation for oxide graphene graphite electrode comprises preparing graphene oxide sol at normal temperature, kneading, extruding, roasting, and performing high temperature graphitization processing.

LIU Z, WANG Y, XU W, ZHANG G, ZHAO B

Preparing magnetic material involves mixing powder with binder to obtain magnetic material which comprises boron oxide, neodymium oxide, lanthanum oxide, graphene, bentonite, barium carbonate, strontium carbonate, and iron oxide.

ZHOU G

Coating of substrate with carbon-based material used for e.g. chemical sensor, involves coating activated substrate with graphene oxide coating, exposing graphene oxide coating to vacuum UV radiation and forming graphene-like coating.

TRUICAMARASESCU F, GALLERNAULT M F M, LEMAY R, WARD J A, LEMAY R J R

Graphene-coated substrate has graphene layer which is formed in direct contact with surface of dielectric substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Preparation of highly specific surface area and high-conductivity graphene composite carbon aerogel used e.g. for adsorption material comprises preparing precursor solution, pickling, and subjecting to high temperature carbonization.

SUN W, DU A, LIU Y, ZHOU B, GAO G, WU G, NI X, ZHANG Z, SHEN J