国家/地区 中国（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/182（3）
发明人
公开年 2017（3）
申请年
专利权人

Preparing silicon-carbon-graphene composite involves drying waste silicon sludge, acid leaching, and selectively separating and recovering silicon through ultrasound treatment, and centrifuging solution containing dried sludge.

DONG J H, KWON C H, SUP K D, HYUK C J, KYUNG K S, JANG H, CHANG H, KIL D, CHOI J, KIM S, ZHANG X, JI D, CHOI J H, JIN X

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Graphene-coated substrate has graphene layer which is formed in direct contact with surface of dielectric substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z