国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/194（2）
发明人 QING F（3）
公开年 2019（3）
申请年 2019（3） 
专利权人 UNIV CHINA E.（3）

Transferring a suspended graphene by fixing a mask material on metal substrate with graphene by chemical vapor deposition, and vapor depositing metal over the graphene, removing metal mask material in etching solution, washing and drying.

LI X, NIU Y, QING F, LIU C

Method of transferring graphene film, involves uniformly coating polymethyl methacrylate (PMMA) on metal substrate, etching metal in structural layer A, and covering structural layer B on metal substrate newly grown with target graphene.

SHEN C, LI X, QING F

Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.

LI X, SHEN C, QING F