国家/地区 美国（7）
IPC部 B（7）
IPC大类 B32（7） C08（5） B01（2）
IPC小类 B32B（7） C08K（4） C08J（3）
B01D（2） C08L（2）
IPC B32B005/02（7）
发明人
公开年 2021（7）
申请年 2021（5）  2020（2） 
专利权人

Composition used for forming e.g. pipe, comprises resin and graphene material.

LADISLAUS P, ARMSTRONG N

Filter used in device e.g. mask, breathing apparatus and face covering, vent cover and heating, ventilation, has polyurethane-based polymer foam comprising virucidal/bactericidal agent having cetylpyridinium chloride and/or dimethyloctadecyl(3-(trimethyloxysilyl)propyl)ammonium chloride.

RAMAPPA D A, JOGIKALMATH G

Fiber polymer composite used for forming reinforced articles such as flexible tapes for e.g. car doors, mud guards, bumpers and engine covers, comprises fibers of material and matrix material which is in direct contact with at least some of fibers and comprising amorphous poly-(alpha)-olefin.

CEPA S, KARGERKOCSIS J, BARANY T, VARGA L J, BABIK S, MONDRZYK S, SPITZER U, EBBERS A, KARGERKOCSIS A, KARGERKOCSIS V, JOSEPH K, BARANITAMAS, BARGARASLOJOZEF, CHICJABRINA M, SPITZERUDO

Modular utility vehicle comprises e.g. operator cab fixed to front portion of chassis, and modular panels formed of composite sandwich material comprising surface sheet, and forming containment construct fixed to rear portion of chassis.

FORAN H C, FREEMANGIBB E

Resin composition used to form dielectric substrate layer and prepreg used to form printed circuit board, comprises polymeric based material and fillers comprising hollow fillers comprising hollow filler, and material of hollow filler is silicon dioxide.

CHANG C, WU Y, ZHANG C

Injection-molded multilayer flame retardant fire-retardant structure comprises support layer composed of porous fiber fabric, and two flame- retardant layers each composed of thermoplastic flame- retardant polymer materials.

CHEN M, CHEN H S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H