国家/地区 英国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（4） C23C016/26（4） C23C016/02（2）
C23C016/40（2） C23C016/455（2） C30B025/18（2）
C30B029/02（2） H01L021/02（2）
发明人 DIXON S（4） GUINEY I（4） GRIFFIN R M（3）
THOMAS S（3） BADCOCK T J（2）
公开年 2022（4）
申请年 2022（3） 
专利权人 PARAGRAF LTD（4）

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S