国家/地区 英国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） H01L（2）
IPC C23C016/26（2） C23C016/455（2） H01L021/02（2）
发明人 DIXON S（2） GUINEY I（2） THOMAS S（2）
公开年 2022（3）
申请年 2021（3）
专利权人 PARAGRAF LTD（3）

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Providing air- and/or moisture-barrier coating on at least portion of two-dimensional material used in electronic device, by e.g. providing substrate having two-dimensional material on it, providing composition comprising inorganic oxide, fluoride or sulfide precursor and doping agent.

GUINEY I, THOMAS S, TYLER M, GLASS H, WALLIS R