国家/地区 美国（3） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C23（3） H01（3）
IPC小类 C23C（3） H01L（3）
IPC C23C016/26（3）
发明人 MALLICK A B（2） SINGHA R S（2）
公开年 2023（3）
申请年 2022（2） 
专利权人 APPLIED MATERIALS INC（3）

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X