国家/地区 韩国（5） 美国（3） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 H01（4） C01（3） C23（3）
IPC小类 C01B（3） C23C（3） H01L（3）
IPC H01L021/285（3） H01L021/768（3） C01B032/186（2）
C23C016/26（2） H01L021/02（2）
发明人 LEE C（5）
公开年 2023（5）
申请年 2022（5）
专利权人 SAMSUNG ELEC.（3）

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

High-strength steel plate comprises base steel plate, and ferrite layer having internal oxide layer on which iron-nickel alloy layer is formed with excellent surface quality formed in internal oxide layer from surface of ferrite layer.

LEE K, LEE C, KANG K, KIM N, JANG Y, LEE J, KANG K C, KIMNAMAH, JANG Y M

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S

Positive electrode for lithium-sulfur battery, comprises positive electrode current collector and positive electrode active material layer positioned on at least one surface of positive electrode current collector.

KANG D Y, YANG S, LEE C, SONG M, MYUNGJUN S, LI C, KANG D