国家/地区 世界知识产权组织（2）
IPC部 C（4）
IPC大类 H01（4） C01（3） C23（2）
IPC小类 H01J（4）
IPC C01B032/186（2） H01J037/32（2）
发明人
公开年 2023（4）
申请年 2022（4）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Graphene grid used for structural analysis of substance e.g. beta-galactosidase, vacuolar-type adenosine triphosphatase and ferritin, using cryo-electron microscope, has structure in which functional group containing silicon atom and/or phosphorus atom are introduced on graphene surface.

HARUYASU A, MAIKO M, TSUYOSHI I

Preparation method of graphene-based composite material involves using mixed gas of argon gas and hydrogen as carrier gas, and obtaining graphene-based composite material by chemical vapor deposition, where graphene material grows parallel to substrate in composite material.

WEI M, CHEN L, GUO X, ZHAO Y, LI X, ZENG F, TANG S, TANG Z