国家/地区 中国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（3） C23C016/26（3） C30B029/02（3）
C23C016/02（2） H01L021/02（2）
发明人
公开年 2023（4）
申请年 2021（2）  2022（2） 
专利权人

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T