国家/地区 中国（8） 韩国（2）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（7） H01M（5） B82Y（2）
C01D（2） C22B（2） H05B（2）
IPC B82Y040/00（2） C01B032/184（2） C01B032/19（2）
C01B032/194（2） C01D015/06（2） C01D015/08（2）
C22B007/00（2） C22B026/12（2） H01M004/38（2）
H01M010/0525（2） H01M010/54（2）
发明人 WANG J（9）
公开年 2023（9）
申请年 2022（5）  2021（2）  2023（2） 
专利权人 UNIV PUKYONG.（2）

High-throughput laser synthesis method of graphene loaded nanoparticles useful as anode material of the lithium carbon dioxide battery by carrying out in-situ conversion polyimide polymer film or polyethyleneimine polymer film by laser, dropping metal precursor salt solution to substrate and drying.

WANG J, ZHANG J, XIE K, GUO C, HAN X

Preparing porous silicon/aluminum oxide/amorphous carbon composite material by e.g. paving porous silicon containing aluminum on bottom of porcelain boat, placing in tubular furnace, heating, introducing carbon dioxide, converting aluminum to aluminum oxide, introducing protective gas and cooling.

WANG J, ZHAO X, LI X, HAN F

Activation method before metallization of thick copper printed circuit board hole involves preparing graphene liquid and graphene oxide liquid, mixing to obtain graphene copper plating pre-activation liquid without dispersant, and injecting activating solution.

BAI J, XIE D, FANG B, WANG J

Selectively recovering lithium from lithium manganese iron phosphate, comprises reacting lithium manganese iron phosphate powder with sulfuric acid solution.

WANG J, WANG J P

Selectively recycling lithium from lithium iron phosphate comprises reacting lithium iron phosphate powder with sulfuric acid solution.

WANG J, WANG J P

Preparing one-dimensional material based on tellurium niobium used as e.g. material for catalyzing and adsorbing sulfur-lithium battery anode, involves dissolving niobium source and tellurium source in solvent, adding surfactant, reacting mixed solution in vessel, centrifuging, collecting and drying.

YIN G, ZHANG Y, WANG J, GENG S, LOU S

Self-adaptive electrochemical stripping method for preparing graphene, involves electrolyzing and peeling pre-inserted layer electrode in electrolyte according to preset voltage and preset current density to obtain graphene.

WANG J, WANG C

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Graphite heater for chemical vapor deposition graphite alkene comprises graphite electrode connected with water cooling copper electrode of gas phase deposition furnace and heating component comprising electric part and heating rod.

WANG J, XU A, XUE Y