国家/地区 日本（4）
IPC部 C（4） B（2） H（2）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4）
IPC C01B032/184（4）
发明人
公开年 2023（4）
申请年 2022（2） 
专利权人

Production of graphene nanoribbons used in semiconductor device e.g. field effect transistor for electronic devices, involves synthesizing polyaromatic-based polymer by eliminating specific group from polymer, and bonding carbon atoms of aromatic ring from which specific group is eliminated.

YAMAGUCHI J

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Producing graphene material used in graphene electrode for electric double layer capacitor, by preparing graphene oxide, heat-treating graphene oxide, dispersing heat-treated graphene oxide in dispersion medium, and hydrothermally treating thermally reduced graphene oxide dispersion.

JIE T, SHIQI L, KUN Z, YUKINORI H, YORISHIGE M, TANG J, LIN S Q, ZHANG K, HATO Y, MATSUBA Y

Heat dissipation component used for e.g. battery, comprises substrate comprising metal, and composite material comprising multilayer graphene layer in which two or more layers of graphene are laminated, and amorphous carbon wall portion adhered to graphene layer in circumferential direction.

WATANABE J