国家/地区 中国（4）
IPC部 B（4）
IPC大类 B01（4） C01（4）
IPC小类 B01J（4）
IPC C01B031/04（4）
发明人 KIM T（4）
公开年 2017（2）
申请年 2016（2） 
专利权人 UNIV GACHON .（2） UNIV GACHON .（2）

Making graphene metal nanoparticle-composite, comprises e.g. making graphene by applying shearing force to solution of graphite-based material, preparing metal nanoparticles by applying shearing force to solution of e.g. metal precursor.

KIM T Y, HONG J P, KIM T, HONG J

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Manufacture of graphene used in manufacture of e.g. display apparatus, involves adding graphite-based material to fluid containing solvent and rotating fluid to perform delamination of graphite-based material by shear force.

KIM T, PARK S, YOUNG K T, JUN P S

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J