国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/188（3）
发明人 LIU Y（3）
公开年 2018（2）
申请年
专利权人

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Synthesis of graphene by carbon oxide-assisted chemical vapor deposition involves polishing and oxidizing substrate, placing substrate into chemical vapor deposition system, predetermining graphene, and recording nucleation density.

LIU Y, CHEN Y

Preparing diamond micropowder surface in-situ growing graphene layer, involves adding deionized water and hydrofluoric acid solution per gram of diamond, where diamond of is placed in a plastic container, and added deionized water.

HUANG H, LIU Y, HU J, WANG Y, WU Y, SHI H, LI Y, WEN B