国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4） H01（4） C01（2）
IPC小类 C23C（4）
IPC C23C016/02（4）
发明人
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Preparing gallium nitride film used for blue light emitting diode, comprises e. g. drying pre-processed substrate with high-purity nitrogen, adding into vacuum reaction chamber, heating, stabilizing first preset time, and using remote ammonia plasma to process second preset time.

YAN T, YE Z, REN W, WANG R, ZHANG Y