国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） C09（7）
IPC小类 C01B（7）
IPC C09K005/14（7）
发明人 LIU J（7）
公开年 2022（3） 2014（2）
申请年 2013（2）  2021（2） 
专利权人 CHN ENERGY I.（2） NAT INST CLE.（2） SHANGHAI INS.（2）

Heat accumulation of carbon material with z-plane orientation degree and high degree of graphitization and specific degree of overall orientation, prepared by mixing thermally conductive fillers, agglomerant and high thermally conductive additives, and pressing and molding.

ZHANG H, YU D, WEI J, SHENG Y, GAO G, ZHENG D, LIANG W, LIU J, DUAN C

High-strength heat accumulation carbon material useful in heat accumulation and/or heat dissipation field, prepared by mixing components in high-strength heat storage carbon material composition, molding, sintering or graphitizing molding material in inert atmosphere.

ZHANG H, YU D, WEI J, GAO G, ZHENG D, SHENG Y, LIANG W, LIU J, DUAN C

Preparing foam copper-graphene-expanded graphite-graphite composite heat dissipation material, involves pretreating foamy copper, loading modified graphene oxide on surface of foamy copper to obtain surface-loaded modified graphene oxide foamy copper.

DONG J, NAN D, LI X, LIU Z, LIU J, CHANG H, JI K, BAI L

Preparation of high thermal conductivity graphene film, involves placing substrate with oxidized graphene film in aqueous solution containing reducing agent to reduce graphene film surface, separating from substrate, and heat treating.

LIU J

Preparation of vertical array graphene thin film used in high power electronic device field, by coating graphene oxide solution into base plate, redacting with strong reducing agent, cutting, and folding into vertical arrangement.

LIU J, HUANG S

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.

WANG H, XIE X, WANG L, ZHANG Y, LIU J