国家/地区 中国（31）
IPC部 C（31）
IPC大类 C01（31） C09（5） B01（4）
H05（4） B82（2） C08（2）
H01（2）
IPC小类 C01B（31）
IPC C01B032/184（14） C01B032/194（10） C01B032/198（7）
C01B032/186（5） H05K007/20（4） B82Y040/00（2）
C09K011/65（2） H01M004/62（2）
发明人 CAI J（31）
公开年 2022（21） 2023（10）
申请年 2022（31）
专利权人 GUANGDONG MO.（25） KUNMING YUNT.（2）

Preparing highly oriented graphene aerogel used for heat management field comprises e.g. immersing porous polyurethane film in graphene oxide slurry, winding on block-shaped substrate for rolling treatment, drying, removing block-like substrate, and performing graphitization treatment.

HAO Z, YE Y, ZHU J, CAI J

Method for preparing graphene powder, involves obtaining reduced oxidization graphene particles, heating and processing reduced oxidized graphene particles and drying to obtain dried granular graphene powder.

PENG Y, CHEN Q, CAI J

Preparation of graphene film involves coating graphene oxide slurry on porous substrate to obtain graphene oxide film, punching incompletely dried film, drying completely, heat-pretreating, carbonizing, and high-temperature graphitizing.

HE J, XIAO W, LIANG H, CAI J

Preparing high specific surface area reduction oxidation graphene/carbon tube composite powder useful in lithium battery, comprises attaching carbon nano-tube by sodium bicarbonate, interlayer insertion in graphene dispersion liquid, and reducing and peeling composite powder by heat treatment.

ZHAO L, CAI J

Preparation of thickened graphene oxide film for preparing heat conducting film, involves mixing graphene oxide cake, folding and extruding into sheet under surface wetting condition, repeating for several times and reducing thickness.

ZHAO L, CAI J

Graphene growth support has carrier whose ends are provided with fixing portion for fixing growth substrate and detachably connected with carrier, so that fixing piece is provided with through hole for gas to pass through.

HAO Z, WANG J, CAI J

Preparation of graphene superconducting film for electronic component, involves soaking graphene oxide film in solution for liquid phase reduction, drying and heat-treating, where heat treatment includes low-temperature heat treatment, high-temperature heat treatment and graphitization treatment.

WANG J, HUANG W, GUO W, LIU Z, CAI J

Preparing chiral graphene on gold substrate involves placing precursor molecule capable of synthesizing tetra anthracene alkene in crucible, heating, undergoing Ullman reaction and dehalogenation reaction by precursor molecules containing halogen groups and performing carbon-carbon coupling.

CAI J, ZHANG H, LU J

Graphene oxide production device, includes a cold water tank, mold temperature controller, reaction kettle and warm water tank, where water outlet of cold water tank and water inlet of temperature machine is connected through a water pipe.

LIAO J, LV J, CAI J

Growth carrier for preparing graphene film by cold wall chemical vapor deposition method, has supporting plates whose opposite side edges are inserted in clamping grooves, where upper or lower surface of plate is vertical to rod direction.

HAO Z, WANG J, CAI J