国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） C04（2） C23（2）
IPC小类 C30B（6）
IPC C30B035/00（6）
发明人
公开年 2021（3） 2022（2）
申请年 2020（2）  2021（2） 
专利权人

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Synthesis device for producing indium phosphide comprises shell, mounting box, rotating component and quartz tube, where two sides of bottom of shell are equipped with two groups of foot pads, one side of inside of top part is equipped.

YU H, ZHAN X, MENG K, ZHAN Z

Constant temperature device for crystal growth, has connecting block that is fixedly connected with seed crystal rod whose lower end is connected with crystal through straight slot.

YANG J

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Graphene-reinforced silicon carbide heating rod comprises silicon carbide, graphene oxide boron, boron carbide, surfactant and binder in cold area and silicon carbide, boron carbide, surfactant and binder in hot zone.

SHEN L, DAI P, JI C, WANG Y

Graphite heating device for monocrystalline silicon production, includes universal wheels are fixed at the corners of the bottom of the base, and supporting feet are fixed at the bottom of the base on one side of the universal wheel.

SONG S, GAO Y, ZHANG P, QI Y, HE X, YANG Y