国家/地区 中国（3）
IPC部 C（3）
IPC大类 C25（3）
IPC小类 C25F（3）
IPC C25F003/22（3）
发明人
公开年 2020（2）
申请年
专利权人

Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.

HAO Y, NIU W

Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.

WU B, ZHANG J, LIU Y

Preparation method for single crystal graphene structure, has annealing copper foil at constant temperature, and reducing temperature of copper foil to room temperature.

LIN L, LIU Z, PENG H, SUN L