国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B029/02（2）
发明人 ZHANG H（4）
公开年 2015（4）
申请年 2014（2） 
专利权人 SHANGHAI INS.（3）

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Two-dimensional carbon-nitrogen single crystal alloy comprises carbon skeleton of graphene and doping nitrogen atom.

CUI P, ZENG Z, ZHANG H, ZHANG Z