国家/地区 中国（26）
IPC部 B（26）
IPC大类 C01（26）
IPC小类 C01B（26）
IPC C01B031/04（21） B82Y030/00（18） B82Y040/00（18）
C01B031/02（18） C23C016/26（16） C01B032/186（7）
B32B009/00（5） C23C016/56（5） C03C025/68（4）
C23C016/02（4） H01B001/04（4） H01B013/00（4）
B32B009/04（3） B82B003/00（3） C03C015/00（3）
发明人 FAN F Y（5） FAN S（5） JIANG K（5）
LIN X（5） XIAO L（5） LIN X Y（4）
DING G（3） XIE X（3） AHN J（2）
AHN J H（2） CHIBA G（2） CHIBA Y（2）
CHOE P（2） CHOI B（2） CHOI B L（2）
公开年 2012（26）
申请年 2011（15）  2012（11） 
专利权人 HON HAI PREC.（5） HONGFUJIN PR.（5） UNIV TSINGHU.（5） HANWHA TECHW.（4）
SAMSUNG TECH.（4） CHINESE ACAD.（3） SHANGHAI INS.（3） DING G（2）
JX NIPPON MI.（2） NIPPON MININ.（2） NIPPON MININ.（2） SAMSUNG ELEC.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
XIE X（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A