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Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.
PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q
Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.
Preparation of easy differentiation polycrystalline silicon wafers involves mixing aluminum alloy powder and silicon carbide, spraying with graphene ethanol dispersion, pickling, refining, degassing, machining and bonding with core plates.
WANG X
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