国家/地区 德国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4） B82Y030/00（2） B82Y040/00（2）
C01B031/02（2）
发明人
公开年 2013（3）
申请年 2011（4）
专利权人 INT BUSINESS.（2）

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Formation of graphene layer for electrode of e.g. emitter layer system, involves forming amorphous carbon layer on substrate by physical vapor deposition, and carrying out flash annealing in atmosphere of controlled composition.

SCHREIL M, BURGHART M, KAUFMANN M

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C