国家/地区 欧洲专利局（EPO）（3）
IPC部 C（3） B（2）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C016/02（3）
发明人 COJOCARU C（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 CENT NAT REC.（2） ECOLE POLYTE.（2）

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C