国家/地区 日本（3）
IPC部 C（3）
IPC大类 C23（3） B01（2） C01（2）
H01（2）
IPC小类 C23C（3） B01J（2） C01B（2）
H01L（2）
IPC C23C016/02（3）
发明人
公开年 2016（3）
申请年
专利权人

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R