国家/地区 日本（6）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C01B（6）
IPC C01B031/02（5） B82Y030/00（4） C01B031/04（4）
B82B003/00（3） B82B001/00（2） B82Y040/00（2）
C01B031/00（2） H01L029/06（2）
发明人
公开年 2009（3） 2010（2）
申请年 2008（6）
专利权人

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z

Preparation of graphene or graphene dispersion used for manufacturing paper, film, composite and articles for nanoelectronics, nanocomposites and batteries, involves reducing purified exfoliated graphite oxide in presence of base.

LI D, WALLACE G G

Composite material for manufacture of heat-emitting component, comprises layers of fibrous carbon material including tubular structural component composed of graphene, and base material including discharge plasma sintered compact.

KATAGIRI K, SHIMIZU A, IMANISHI T, SATO T, NAKAMA N, KAKITSUJI A, SASAKI K, AKIYUKI S, ASSEUSI G, DERUMICHYU I, DOYOHIRO S, GAJEUAKI G, GASSEUHIKO S, NOBUHITO N, ATSUSHI K, KATSUHIKO S, KAZUAKI K, TERUMITSU I, TOYOHIRO S