国家/地区 日本（6）
IPC部 C（6）
IPC大类 C01（6） H01（4） B05（2）
B32（2） B82（2）
IPC小类 C01B（6）
IPC C01B031/02（4） C01B031/04（3） B05D003/02（2）
C01B031/00（2） H01L021/28（2） H01L021/3205（2）
H01L023/52（2） H01L029/06（2）
发明人
公开年 2010（6）
申请年 2008（6）
专利权人 DOKURITSU GY.（2）

Platinum cluster used as highly active catalyst for electrode used for capacitor and fuel cell, comprises platinum particles with particle diameter of below specified value supported by carbon material containing graphene.

AKITA T, HOMMA I, KAYAMA M, NAKAMURA J, OKAZAKI K, YU E J, HONMA I

Semiconductor device for liquid crystal display, includes transparent substrate having graphene film, graphite film, or amorphous carbon film such that carbon film is transferred to substrate from carbon material substrate by laser beam.

HIURA H, KANAYAMA T, TADA T

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Hydrogen-gas occlusion graphene used for manufacturing hydrogen gas, is obtained by carrying out chemical adsorption of hydrogen molecule to graphene surface.

KAWASHIMA Y

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T