国家/地区 韩国（6）
IPC部 C（6）
IPC大类 C01（6） H01（6）
IPC小类 C01B（6）
IPC H01M004/36（5） H01M004/587（5） C01B019/00（3）
C01B032/184（3） C01G039/06（3） H01M004/58（3）
H01M010/0525（3） C01G039/00（2） H01M004/62（2）
H01M010/0567（2）
发明人 PARK S（6）
公开年 2022（6）
申请年 2021（4）  2020（2） 
专利权人 KOREA INST E.（3）

Anode material useful for sodium metal battery and sodium secondary battery, comprises crystalline graphite carbon structure and amorphous carbon structure positioned on at least portion of crystalline graphite carbon structure.

JIN H, PARK S, SOO Y Y

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Hybrid complex useful for preparing electrode active material for lithium-ion battery comprises graphite core particles, graphene nanosheets on surface of graphite core particles, and two-dimensional heterogeneous laminate structure.

YUN H N, PARK S, SONG K S, CHUN Y K, HYUN R M, YANG J, YOO J J, JANG G Y, LEEYOUNGA

Preparing hybrid complex useful for preparing electrode active material for lithium-ion battery comprises mixing graphene or transition metal dichalcogenide, injecting nitrogen, mixing cation precursor solution, and ion-exchanging.

YUN H N, PARK S, JUNG K, YANG J, YOO J J, HYUN R M, LEEYOUNGA, JANG G Y, SHIN H

Preparing hybrid composite useful for preparing anode active material for lithium-ion battery mixing alkali ion precursor solution into bulk material powder, injecting water, heat-treating the mixture, and removing surfactant.

YUN H N, PARK S, YOO J J, JUNG K, HYUN R M, YANG J, LEEYOUNGA, JANG G Y, SHIN H, KIM J

Graphene film used for forming electrochemical device, comprises graphene structure comprising regions comprising graphene structure arranged in plane direction and direction perpendicular to plane direction.

LEE S S, JUNG H K, AN K, LIM J, MYUNG S, SONG W, JI S G, SONG D S, PARK S, YOON Y, SEOG S, YOON Y H, GI S G