国家/地区 中国（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） C23（3）
H01（3） C30（2）
IPC小类 B82Y（4）
IPC B82Y030/00（4）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（3）
申请年 2009（4）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Drilling fluid useful in e.g. drilling operations to prevent or reduce the penetration of drilling fluids into rock formations, comprises graphene.

DOYLE C D, KOSYNKIN D V, LOMEDA J R, SCHMIDT H K, TOUR J M, TOUR J, SCHMIDT H, LOMEDA J, KOSYNKIN D, DOYLE C