国家/地区 波兰（4）
IPC部 C（4） B（2）
IPC大类 C01（4） B82（2）
IPC小类 C01B（3） B82Y（2）
IPC C01B031/04（3） B82Y040/00（2）
发明人
公开年 2014（4）
申请年 2012（4）
专利权人 POLITECHNIKA.（2）

Method for producing graphene layer on substrate, involves applying graphene ink and solvent that is butyl carbitol acetate to substrate, curing graphene ink layer, followed by applying graphene filler to ink layer by using spraying process.

WROBLEWSKI G, JANCZAK D, JAKUBOWSKA M, SLOMA M, MLOZNIAK A

Thermoelectric semiconductor material, comprises cobalt triantimonide compound and graphene oxide or graphene.

WRONA A, MAZUR J, CZEPELAK M, LIS M, TOMCZYK P

Separating graphene film from liquid graphene-forming matrix involves upon completion of heating/adding hydrocarbon mixture, and during cooling, sliding mould frame over surface of liquid forming matrix, and lifting mould frame above matrix.

ATRASZKIEWICZ R, DYBOWSKI K, KLINOWSKI B M, KULA P, MODRZYK W, PIETRASIK R, ZAWISTOWSKI P Z

Method for preparing surface modified graphene flakes, involves dispersing organic solvent with graphene oxide flakes, introducing aluminum compound, stirring in presence of air, removing solvent, and decomposing mixture in presence of air.

KUNICKI A, OLSZYNA A, JASTRZEBSKA A, JURECZKO J, KURTYCZ P