国家/地区 波兰（6）
IPC部 C（6） B（2）
IPC大类 C01（5） B82（2）
IPC小类 C01B（5） B82Y（2）
IPC C01B031/04（5） C01B031/00（4） B82Y040/00（2）
C01B031/02（2）
发明人 STRUPINSKI W（6）
公开年 2013（2）
申请年 2016（2） 
专利权人 MATERIALOW E.（3） ISOS TECHNOL.（2）

Making flexible antennas working in gigahertz range based on reduced graphene oxide of any shape on flexible substrate, comprises e.g. applying inkjet ink to polyethylene terephthalate substrate using a computer-controlled inkjet printer.

KLUSEK Z, DABROWSKI P, ROGALA M, BUSIAKIEWICZ A, KOWALCZYK P, KOZLOWSKI W, SIERADZKI Z, LIPINSKA L, STRUPINSKI W, KRUCINSKA I, PUCHALSKI M

Production of graphene foil with pre-defined number of graphene layers involves producing graphene on metallic substrate, depositing polymer layer on graphene surface, and separating polymer/graphene stack from substrate.

KRAJEWSKA A, PASTERNAK I, PRZEWLOKA A, STRUPINSKI W

Transferring graphene film from source substrate onto target substrate involves marking selected region of graphene film on source substrate with waterproof binder to form closed frame around selected region.

KRAJEWSKA A, PASTERNAK I, STRUPINSKI W

Method for producing epitaxial graphene on silicon carbide substrate, involves reducing value of partial pressure of graphene is reduced to certain value, and etching substrate on graphene such that partial pressure of propane is increased.

STRUPINSKI W

Manufacture of microscopic graphene-containing grains used in e.g. supercapacitors, involves heating granules of copper, nickel or aluminum at specific conditions and cooling to room temperature under argon atmosphere.

STRUPINSKI W

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O