国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/768（3） H01L023/522（3） H01L023/532（3）
H01L023/528（2）
发明人 YANG S（3）
公开年 2021（3）
申请年 2019（3）
专利权人 TAIWAN SEMIC.（3）

Semiconductor structure for manufacturing integrated circuit (IC) device, has via which electrically couples first conductive feature to second conductive feature, and graphene layer arranged over portion of first conductive feature.

YANG S, CHAN Y, LEE M, CHEN H, SHUE S, LI M, SUI X, LEE M H

Interconnect structure for integrated circuit (IC) device e.g. transistor, has graphene layer which is provided between second contact feature and third dielectric layer.

YANG S, LEE M, SHUE S, LI M, SUI X, LEE M H

Interconnect structure used to fabricate e.g. transistors comprises first contact feature in first dielectric layer, second dielectric layer, second contact feature over first contact feature, barrier layer between second dielectric layer and second contact feature and carbon layer.

YANG S, LUO G, CHUNG C, LEE M, SHUE S, LI M, SUI X, LEE M H