国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C23（3） H01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 MUELLEN K（2） SACHDEV H（2） SCHWAB M G（2）
公开年 2015（3）
申请年 2014（2） 
专利权人 BASF SE（2） MAX PLANCK G.（2）

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K