国家/地区 美国（4）
IPC部 C（4）
IPC大类 C30（4） H01（4） C01（3）
C23（3）
IPC小类 C30B（4）
IPC C30B025/18（4）
发明人
公开年 2016（2） 2017（2）
申请年 2016（4）
专利权人

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z