国家/地区 美国（5）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5） C03C（5） B82Y（4）
B32B（3） B44C（3） C23C（3）
H01L（3） C23F（2） C25F（2）
H01B（2）
IPC C03C025/68（5）
发明人 KIM N（2） KIM N Y（2）
公开年 2012（2） 2013（2）
申请年 2011（2）  2012（2） 
专利权人 HANWHA AEROS.（2） SAMSUNG TECH.（2）

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Graphene transfer method involves attaching end of stacked structure having catalyst metal, graphene and supporting body, to a point of target film; forming second structure by removing the metal and transporting film in roll-to-roll manner.

KIM N, KIM N Y

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Removing a single graphene layer from a graphene material comprises applying a metal to a surface of the graphene material, and applying a hydrogen containing solution to the surface of the graphene material.

TOUR J M, DIMIEV A M, KOSYNKIN D V

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S