国家/地区 China（6）
关键词 GRAPHENE（6）
出版物
出版时间 2021（2）
机构 HEBEI SEMICO.（3）
作者 CAI SJ（6）

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

YU C, HE ZZ, SONG XB, LIU QB, GAO LB, YAO B, HAN TT, GAO XD, LV YJ, FENG ZH, CAI SJ

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

SOLID STATE COMMUNICATIONS

YU C, LI J, GAO KH, LIN T, LIU QB, DUN SB, HE ZZ, CAI SJ, FENG ZH

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ

Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

ACS APPLIED NANO MATERIALS

GAO XD, YU C, HE ZZ, GUO JC, LIU QB, ZHOU CJ, CAI SJ, FENG ZH

Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, GAO XD, LIU QB, ZHANG YH, YU GH, HAN TT, LIU C, FENG ZH, CAI SJ

Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

IEEE TRANSACTIONS ON ELECTRON DEVICES

YU C, HE ZZ, SONG XB, GAO XD, LIU QB, ZHANG YH, YU GH, HAN TT, BU AM, CAI SJ, FENG ZH