国家/地区 Malaysia（15）
关键词 CURRENTVOLTAGE CHAR.（3） DENSITY OF STATE（2） GRAPHENE NANORIBBON（2）
GRAPHENE NANOSCROLL.（2） SCHOTTKY DIODE（2）
出版物 JOURNAL OF COMPUTAT.（7） JOURNAL OF NANOMATE.（2） NANOSCALE RESEARCH .（2）
出版时间 2013（15）
机构 UNIV TEKNOL .（11） UTM（3）
作者 ISMAIL R（15）

Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

SAEIDMANESH M, ISMAIL R, KHALEDIAN M, KARIMI H, AKBARI E

The effect of uniaxial strain on graphene nanoribbon carrier statistic

NANOSCALE RESEARCH LETTERS

JOHARI Z, ISMAIL R

Perpendicular Electric Field Effect on Bilayer Graphene Carrier Statistic

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

SAEIDMANESH M, AHMADI MT, GHADIRY M, AKBARI E, KIANI MJ, ISMAIL R

The Effect of Interconnect on the Circuit Performance of 22 nm Graphene Nanoribbon Field Effect Transistor and MOSFET

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

JOHARI Z, HAMID FKA, AHMADI MT, HARUN FKC, ISMAIL R

Bilayer Graphene Nanoribbon Mobility Model in Ballistic Transport Limit

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, SADEGHI H, NILGHAZ A, KIANI MJ, ISMAIL R

Graphene Nanoribbon Field Effect Transistor Logic Gates Performance Projection

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

JOHARI Z, HAMID FKA, TAN MLP, AHMADI MT, HARUN FKC, ISMAIL R

The Potential Barrier of Graphene Nanoribbon Based Schottky Diode

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

KIAT WK, ISMAIL R, AHMADI MT

Geometry Effect on Graphene Nanoscrolls Band Gap

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

HAMZAH MAN, JOHARI Z, HAMID FKA, AHMADI MT, ISMAIL R

Current-Voltage Characteristics of Bilayer Graphene Nanoribbon Field Effect Transistor

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, NILGHAZ A, SAMADI J, KIANI MJ, ANWAR S, ISMAIL R

Analytical Modeling of Monolayer Graphene-based NO2 Sensor

SENSOR LETTERS

RAHMANI M, AHMADI MT, KARIMI FAH, KIANI MJ, AKBARI E, ISMAIL R